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Novel Spin–Orbit Torque Generation at Room Temperature in an All‐Oxide Epitaxial La 0.7 Sr 0.3 MnO 3 /SrIrO 3 System
Author(s) -
Huang Xiaoxi,
Sayed Shehrin,
Mittelstaedt Joseph,
Susarla Sandhya,
Karimeddiny Saba,
Caretta Lucas,
Zhang Hongrui,
Stoica Vladimir A.,
Gosavi Tanay,
Mahfouzi Farzad,
Sun Qilong,
Ercius Peter,
Kioussis Nicholas,
Salahuddin Sayeef,
Ralph Daniel C.,
Ramesh Ramamoorthy
Publication year - 2021
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202008269
Subject(s) - spintronics , materials science , heterojunction , epitaxy , ferromagnetism , condensed matter physics , magnetization , ferromagnetic resonance , spin–orbit interaction , optoelectronics , nanotechnology , magnetic field , physics , layer (electronics) , quantum mechanics
Spin–orbit torques (SOTs) that arise from materials with large spin–orbit coupling offer a new pathway for energy‐efficient and fast magnetic information storage. SOTs in conventional heavy metals and topological insulators are explored extensively, while 5d transition metal oxides, which also host ions with strong spin–orbit coupling, are a relatively new territory in the field of spintronics. An all‐oxide, SrTiO 3 (STO)//La 0.7 Sr 0.3 MnO 3 (LSMO)/SrIrO 3 (SIO) heterostructure with lattice‐matched crystal structure is synthesized, exhibiting an epitaxial and atomically sharp interface between the ferromagnetic LSMO and the high spin–orbit‐coupled metal SIO. Spin‐torque ferromagnetic resonance (ST‐FMR) is used to probe the effective magnetization and the SOT efficiency in LSMO/SIO heterostructures grown on STO substrates. Remarkably, epitaxial LSMO/SIO exhibits a large SOT efficiency, ξ || = 1, while retaining a reasonably low shunting factor and increasing the effective magnetization of LSMO by ≈50%. The findings highlight the significance of epitaxy as a powerful tool to achieve a high SOT efficiency, explore the rich physics at the epitaxial interface, and open up a new pathway for designing next‐generation energy‐efficient spintronic devices.