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A Library of Atomically Thin 2D Materials Featuring the Conductive‐Point Resistive Switching Phenomenon
Author(s) -
Ge Ruijing,
Wu Xiaohan,
Liang Liangbo,
Hus Saban M.,
Gu Yuqian,
Okogbue Emmanuel,
Chou Harry,
Shi Jianping,
Zhang Yanfeng,
Banerjee Sanjay K.,
Jung Yeonwoong,
Lee Jack C.,
Akinwande Deji
Publication year - 2021
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202007792
Subject(s) - materials science , monolayer , quantum tunnelling , neuromorphic engineering , scanning tunneling microscope , heterojunction , electrical conductor , resistive random access memory , nanotechnology , memristor , molybdenum disulfide , conductive atomic force microscopy , condensed matter physics , chalcogenide , thin film , optoelectronics , chemical physics , transition metal , conductance , electrode , atomic force microscopy , composite material , chemistry , electronic engineering , biochemistry , computer science , engineering , catalysis , physics , machine learning , artificial neural network
Non‐volatile resistive switching (NVRS) is a widely available effect in transitional metal oxides, colloquially known as memristors, and of broad interest for memory technology and neuromorphic computing. Until recently, NVRS was not known in other transitional metal dichalcogenides (TMDs), an important material class owing to their atomic thinness enabling the ultimate dimensional scaling. Here, various monolayer or few‐layer 2D materials are presented in the conventional vertical structure that exhibit NVRS, including TMDs (MX 2 , M = transitional metal, e.g., Mo, W, Re, Sn, or Pt; X = chalcogen, e.g., S, Se, or Te), TMD heterostructure (WS 2 /MoS 2 ), and an atomically thin insulator (h‐BN). These results indicate the universality of the phenomenon in 2D non‐conductive materials, and feature low switching voltage, large ON/OFF ratio, and forming‐free characteristic. A dissociation–diffusion–adsorption model is proposed, attributing the enhanced conductance to metal atoms/ions adsorption into intrinsic vacancies, a conductive‐point mechanism supported by first‐principle calculations and scanning tunneling microscopy characterizations. The results motivate further research in the understanding and applications of defects in 2D materials.