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Face‐to‐Face Growth of Wafer‐Scale 2D Semiconducting MOF Films on Dielectric Substrates
Author(s) -
Liu Youxing,
Wei Yanan,
Liu Minghui,
Bai Yichao,
Wang Xinyu,
Shang Shengcong,
Du Changsheng,
Gao Wenqiang,
Chen Jianyi,
Liu Yunqi
Publication year - 2021
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202007741
Subject(s) - materials science , microporous material , wafer , electrical conductor , transmission electron microscopy , chemical engineering , dielectric , conductive atomic force microscopy , nanotechnology , crystal (programming language) , optoelectronics , analytical chemistry (journal) , composite material , atomic force microscopy , organic chemistry , chemistry , computer science , engineering , programming language
The preparation of large‐area 2D conductive metal–organic framework (MOF) films remains highly desirable but challenging. Here, inspired by the capillary phenomenon, a face‐to‐face confinement growth method to grow conductive 2D Cu 2 (TCPP) (TCPP = meso‐tetra(4‐carboxyphenyl)porphine) MOF films on dielectric substrates is developed. Trace amounts of solutions containing low‐concentration Cu 2+ and TCPP are pumped cyclically into a micropore interface to produce this growth. The crystal structures are confirmed with various characterization techniques, which include high‐resolution atomic force microscopy and cryogenic transmission electron microscopy (Cryo‐TEM). The Cu 2 (TCPP) MOF film exhibit an electrical conductivity of ≈0.007 S cm −1 , which is approximately four orders of magnitude higher than other carboxylic‐acid‐based MOF materials (10 −6 S cm −1 ). Other wafer‐scale conductive MOF films such as M 3 (HHTP) 2 (M = Cu, Co, and Ni; HHTP = 2,3,6,7,10,11‐triphenylenehexol) can be produced utilizing this strategy and suggests this method has widescale applicability potential.