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Designing the Bending Stiffness of 2D Material Heterostructures
Author(s) -
Yu Jaehyung,
Han Edmund,
Hossain M. Abir,
Watanabe Kenji,
Taniguchi Takashi,
Ertekin Elif,
Zande Arend M.,
Huang Pinshane Y.
Publication year - 2021
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202007269
Subject(s) - heterojunction , materials science , bending stiffness , bending , stiffness , monolayer , flexible electronics , stack (abstract data type) , atomic units , electronics , composite material , deformation (meteorology) , nanotechnology , optoelectronics , computer science , chemistry , physics , quantum mechanics , programming language
2D monolayers represent some of the most deformable inorganic materials, with bending stiffnesses approaching those of lipid bilayers. Achieving 2D heterostructures with similar properties would enable a new class of deformable devices orders of magnitude softer than conventional thin‐film electronics. Here, by systematically introducing low‐friction twisted or heterointerfaces, interfacial engineering is leveraged to tailor the bending stiffness of 2D heterostructures over several hundred percent. A bending model is developed and experimentally validated to predict and design the deformability of 2D heterostructures and how it evolves with the composition of the stack, the atomic arrangements at the interfaces, and the geometry of the structure. Notably, when each atomic layer is separated by heterointerfaces, the total bending stiffness reaches a theoretical minimum, equal to the sum of the constituent layers regardless of scale of deformation—lending the extreme deformability of 2D monolayers to device‐compatible multilayers.