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Hidden Vacancy Benefit in Monolayer 2D Semiconductors
Author(s) -
Zhang Xiankun,
Liao Qingliang,
Kang Zhuo,
Liu Baishan,
Liu Xiaozhi,
Ou Yang,
Xiao Jiankun,
Du Junli,
Liu Yihe,
Gao Li,
Gu Lin,
Hong Mengyu,
Yu Huihui,
Zhang Zheng,
Duan Xiangfeng,
Zhang Yue
Publication year - 2021
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202007051
Subject(s) - monolayer , materials science , semiconductor , vacancy defect , transistor , electron mobility , condensed matter physics , optoelectronics , lattice (music) , density functional theory , nanotechnology , chemical physics , voltage , computational chemistry , physics , chemistry , quantum mechanics , acoustics
Monolayer 2D semiconductors (e.g., MoS 2 ) are of considerable interest for atomically thin transistors but generally limited by insufficient carrier mobility or driving current. Minimizing the lattice defects in 2D semiconductors represents a common strategy to improve their electronic properties, but has met with limited success to date. Herein, a hidden benefit of the atomic vacancies in monolayer 2D semiconductors to push their performance limit is reported. By purposely tailoring the sulfur vacancies (SVs) to an optimum density of 4.7% in monolayer MoS 2 , an unusual mobility enhancement is obtained and a record‐high carrier mobility (>115 cm 2 V −1 s −1 ) is achieved, realizing monolayer MoS 2 transistors with an exceptional current density (>0.60 mA µm −1 ) and a record‐high on/off ratio >10 10 , and enabling a logic inverter with an ultrahigh voltage gain >100. The systematic transport studies reveal that the counterintuitive vacancy‐enhanced transport originates from a nearest‐neighbor hopping conduction model, in which an optimum SV density is essential for maximizing the charge hopping probability. Lastly, the vacancy benefit into other monolayer 2D semiconductors is further generalized; thus, a general strategy for tailoring the charge transport properties of monolayer materials is defined.