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Ultrathin Ga 2 O 3 Glass: A Large‐Scale Passivation and Protection Material for Monolayer WS 2
Author(s) -
Wurdack Matthias,
Yun Tinghe,
Estrecho Eliezer,
Syed Nitu,
Bhattacharyya Semonti,
Pieczarka Maciej,
Zavabeti Ali,
Chen ShaoYu,
Haas Benedikt,
Müller Johannes,
Lockrey Mark N.,
Bao Qiaoliang,
Schneider Christian,
Lu Yuerui,
Fuhrer Michael S.,
Truscott Andrew G.,
Daeneke Torben,
Ostrovskaya Elena A.
Publication year - 2021
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202005732
Subject(s) - passivation , monolayer , materials science , heterojunction , fabrication , optoelectronics , dielectric , nanotechnology , layer (electronics) , medicine , alternative medicine , pathology
Atomically thin transition metal dichalcogenide crystals (TMDCs) have extraordinary optical properties that make them attractive for future optoelectronic applications. Integration of TMDCs into practical all‐dielectric heterostructures hinges on the ability to passivate and protect them against necessary fabrication steps on large scales. Despite its limited scalability, encapsulation of TMDCs in hexagonal boron nitride (hBN) currently has no viable alternative for achieving high performance of the final device. Here, it is shown that the novel, ultrathin Ga 2 O 3 glass is an ideal centimeter‐scale coating material that enhances optical performance of the monolayers and protects them against further material deposition. In particular, Ga 2 O 3 capping of monolayer WS 2 outperforms commercial‐grade hBN in both scalability and optical performance at room temperature. These properties make Ga 2 O 3 highly suitable for large‐scale passivation and protection of monolayer TMDCs in functional heterostructures.