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Engineering Band‐Type Alignment in CsPbBr 3 Perovskite‐Based Artificial Multiple Quantum Wells
Author(s) -
Lee Kwang Jae,
Merdad Noor A.,
Maity Partha,
ElDemellawi Jehad K.,
Lui Zhixiong,
Sinatra Lutfan,
Zhumekenov Ayan A.,
Hedhili Mohamed N.,
Min JungWook,
Min JungHong,
GutiérrezArzaluz Luis,
Anjum Dalaver H.,
Wei Nini,
Ooi Boon S.,
Alshareef Husam N.,
Mohammed Omar F.,
Bakr Osman M.
Publication year - 2021
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202005166
Subject(s) - materials science , optoelectronics , perovskite (structure) , band gap , heterojunction , band offset , semiconductor , quantum well , photodiode , optics , valence band , chemistry , physics , crystallography , laser
Semiconductor heterostructures of multiple quantum wells (MQWs) have major applications in optoelectronics. However, for halide perovskites—the leading class of emerging semiconductors—building a variety of bandgap alignments (i.e., band‐types) in MQWs is not yet realized owing to the limitations of the current set of used barrier materials. Here, artificial perovskite‐based MQWs using 2,2′,2″‐(1,3,5‐benzinetriyl)‐tris(1‐phenyl‐1‐H‐benzimidazole), tris‐(8‐hydroxyquinoline)aluminum, and 2,9‐dimethyl‐4,7‐diphenyl‐1,10‐phenanthroline as quantum barrier materials are introduced. The structures of three different five‐stacked perovskite‐based MQWs each exhibiting a different band offset with CsPbBr 3 in the conduction and valence bands, resulting in a variety of MQW band alignments, i.e., type‐I or type‐II structures, are shown. Transient absorption spectroscopy reveals the disparity in charge carrier dynamics between type‐I and type‐II MQWs. Photodiodes of each type of perovskite artificial MQWs show entirely different carrier behaviors and photoresponse characteristics. Compared with bulk perovskite devices, type‐II MQW photodiodes demonstrate a more than tenfold increase in the rectification ratio. The findings open new opportunities for producing halide‐perovskite‐based quantum devices by bandgap engineering using simple quantum barrier considerations.