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Strain‐Engineered Metal‐to‐Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon
Author(s) -
Chen Binbin,
Gauquelin Nicolas,
Jannis Daen,
Cunha Daniel M.,
Halisdemir Ufuk,
Piamonteze Cinthia,
Lee Jin Hong,
Belhadi Jamal,
Eltes Felix,
Abel Stefan,
Jovanović Zoran,
Spreitzer Matjaž,
Fompeyrine Jean,
Verbeeck Johan,
Bibes Manuel,
Huijben Mark,
Rijnders Guus,
Koster Gertjan
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202004995
Subject(s) - materials science , silicon , superlattice , strain engineering , silicon on insulator , epitaxy , substrate (aquarium) , oxide , nanotechnology , optoelectronics , semiconductor , metallurgy , layer (electronics) , oceanography , geology
Epitaxial growth of SrTiO 3 (STO) on silicon greatly accelerates the monolithic integration of multifunctional oxides into the mainstream semiconductor electronics. However, oxide superlattices (SLs), the birthplace of many exciting discoveries, remain largely unexplored on silicon. In this work, LaNiO 3 /LaFeO 3 SLs are synthesized on STO‐buffered silicon (Si/STO) and STO single‐crystal substrates, and their electronic properties are compared using dc transport and X‐ray absorption spectroscopy. Both sets of SLs show a similar thickness‐driven metal‐to‐insulator transition, albeit with resistivity and transition temperature modified by the different amounts of strain. In particular, the large tensile strain promotes a pronounced Ni 3 d x 2 − y 2orbital polarization for the SL grown on Si/STO, comparable to that reported for LaNiO 3 SL epitaxially strained to DyScO 3 substrate. Those results illustrate the ability to integrate oxide SLs on silicon with structure and property approaching their counterparts grown on STO single crystal, and also open up new prospects of strain engineering in functional oxides based on the Si platform.