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A Cost‐Effective, Aqueous‐Solution‐Processed Cathode Interlayer Based on Organosilica Nanodots for Highly Efficient and Stable Organic Solar Cells
Author(s) -
Cui Mengqi,
Li Dan,
Du Xiaoyan,
Li Na,
Rong Qikun,
Li Ning,
Shui Lingling,
Zhou Guofu,
Wang Xinghua,
Brabec Christoph J.,
Nian Li
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202002973
Subject(s) - materials science , cathode , aqueous solution , organic solar cell , nanodot , chemical engineering , photovoltaics , thermal stability , active layer , nanotechnology , layer (electronics) , photovoltaic system , polymer , composite material , organic chemistry , ecology , chemistry , thin film transistor , engineering , biology
Abstract The performance and industrial viability of organic photovoltaics are strongly influenced by the functionality and stability of interface layers. Many of the interface materials most commonly used in the lab are limited in their operational stability or their materials cost and are frequently not transferred toward large‐scale production and industrial applications. In this work, an advanced aqueous‐solution‐processed cathode interface layer is demonstrated based on cost‐effective organosilica nanodots (OSiNDs) synthesized via a simple one‐step hydrothermal reaction. Compared to the interface layers optimized for inverted organic solar cells (i‐OSCs), the OSiNDs cathode interlayer shows improved charge carrier extraction and excellent operational stability for various model photoactive systems, achieving a remarkably high power conversion efficiency up to 17.15%. More importantly, the OSiNDs’ interlayer is extremely stable under thermal stress or photoillumination (UV and AM 1.5G) and undergoes no photochemical reaction with the photoactive materials used. As a result, the operational stability of inverted OSCs under continuous 1 sun illumination (AM 1.5G, 100 mW cm −2 ) is significantly improved by replacing the commonly used ZnO interlayer with OSiND‐based interfaces.