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High‐Performance Nonvolatile Organic Photonic Transistor Memory Devices using Conjugated Rod–Coil Materials as a Floating Gate
Author(s) -
Chiang YunChi,
Hung ChihChien,
Lin YanCheng,
Chiu YuCheng,
Isono Takuya,
Satoh Toshifumi,
Chen WenChang
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202002638
Subject(s) - materials science , optoelectronics , conjugated system , transistor , photonics , non volatile memory , electromagnetic coil , nanotechnology , polymer , electrical engineering , composite material , engineering , voltage
A novel approach for using conjugated rod–coil materials as a floating gate in the fabrication of nonvolatile photonic transistor memory devices, consisting of n‐type Sol‐PDI and p‐type C10‐DNTT, is presented. Sol‐PDI and C10‐DNTT are used as dual functions of charge‐trapping (conjugated rod) and tunneling (insulating coil), while n‐type BPE‐PDI and p‐type DNTT are employed as the corresponding transporting layers. By using the same conjugated rod in the memory layer and transporting channel with a self‐assembled structure, both n‐type and p‐type memory devices exhibit a fast response, a high current contrast between “Photo‐On” and “Electrical‐Off” bistable states over 10 5 , and an extremely low programing driving force of 0.1 V. The fabricated photon‐driven memory devices exhibit a quick response to different wavelengths of light and a broadband light response that highlight their promising potential for light‐recorder and synaptic device applications.