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Strain‐Engineered Anisotropic Optical and Electrical Properties in 2D Chiral‐Chain Tellurium
Author(s) -
Wang Yixiu,
Yao Shukai,
Liao Peilin,
Jin Shengyu,
Wang Qingxiao,
Kim Moon J.,
Cheng Gary J.,
Wu Wenzhuo
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202002342
Subject(s) - materials science , raman spectroscopy , anisotropy , strain engineering , gauge factor , nanotechnology , optoelectronics , electronics , flexible electronics , tellurium , fabrication , optics , electrical engineering , medicine , physics , alternative medicine , pathology , silicon , metallurgy , engineering
Atomically thin materials, leveraging their low‐dimensional geometries and superior mechanical properties, are amenable to exquisite strain manipulation with a broad tunability inaccessible to bulk or thin‐film materials. Such capability offers unexplored possibilities for probing intriguing physics and materials science in the 2D limit as well as enabling unprecedented device applications. Here, the strain‐engineered anisotropic optical and electrical properties in solution‐grown, sub‐millimeter‐size 2D Te are systematically investigated through designing and introducing a controlled buckled geometry in its intriguing chiral‐chain lattice. The observed Raman spectra reveal anisotropic lattice vibrations under the corresponding straining conditions. The feasibility of using buckled 2D Te for ultrastretchable strain sensors with a high gauge factor (≈380) is further explored. 2D Te is an emerging material boasting attractive characteristics for electronics, sensors, quantum devices, and optoelectronics. The results suggest the potential of 2D Te as a promising candidate for designing and implementing flexible and stretchable devices with strain‐engineered functionalities.