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Ultrabroadband Photodetectors up to 10.6 µm Based on 2D Fe 3 O 4 Nanosheets
Author(s) -
Yin Chujun,
Gong Chuanhui,
Chu Junwei,
Wang Xudong,
Yan Chaoyi,
Qian Shifeng,
Wang Yang,
Rao Gaofeng,
Wang Hongbo,
Liu Yuqing,
Wang Xianfu,
Wang Jianlu,
Hu Weida,
Li Chaobo,
Xiong Jie
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202002237
Subject(s) - photodetector , materials science , optoelectronics , ultraviolet , photoconductivity , infrared , quantum efficiency , chemical vapor deposition , bolometer , wavelength , specific detectivity , optics , dark current , detector , physics
The ultrabroadband spectrum detection from ultraviolet (UV) to long‐wavelength infrared (LWIR) is promising for diversified optoelectronic applications of imaging, sensing, and communication. However, the current LWIR‐detecting devices suffer from low photoresponsivity, high cost, and cryogenic environment. Herein, a high‐performance ultrabroadband photodetector is demonstrated with detecting range from UV to LWIR based on air‐stable nonlayered ultrathin Fe 3 O 4 nanosheets synthesized via a space‐confined chemical vapor deposition (CVD) method. Ultrahigh photoresponsivity ( R ) of 561.2 A W −1 , external quantum efficiency (EQE) of 6.6 × 10 3 %, and detectivity ( D *) of 7.42 × 10 8 Jones are achieved at the wavelength of 10.6 µm. The multimechanism synergistic effect of photoconductive effect and bolometric effect demonstrates the high sensitivity for light with any light intensities. The outstanding device performance and complementary mixing photoresponse mechanisms open up new potential applications of nonlayered 2D materials for future infrared optoelectronic devices.