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Polarized Light‐Emitting Diodes Based on Anisotropic Excitons in Few‐Layer ReS 2
Author(s) -
Wang Junyong,
Zhou Yong Justin,
Xiang Du,
Ng Shiuan Jun,
Watanabe Kenji,
Taniguchi Takashi,
Eda Goki
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202001890
Subject(s) - exciton , materials science , semiconductor , optoelectronics , anisotropy , light emitting diode , polarization (electrochemistry) , condensed matter physics , optics , physics , chemistry
An on‐chip polarized light source is desirable in signal processing, optical communication, and display applications. Layered semiconductors with reduced in‐plane symmetry have inherent anisotropic excitons that are attractive candidates as polarized dipole emitters. Herein, the demonstration of polarized light‐emitting diode based on anisotropic excitons in few‐layer ReS 2 , a 2D semiconductor with excitonic transition energy of 1.5–1.6 eV, is reported. The light‐emitting device is based on minority carrier (hole) injection into n‐type ReS 2 through a hexagonal boron nitride (hBN) tunnel barrier in a metal–insulator–semiconductor (MIS) van der Waals heterostack. Two distinct emission peaks from excitons are observed at near‐infrared wavelength regime from few‐layer ReS 2 . The emissions exhibit a degree of polarization of 80% reflecting the nearly 1D nature of excitons in ReS 2 .