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Defect‐Enhanced Polarization Switching in the Improper Ferroelectric LuFeO 3
Author(s) -
Barrozo Petrucio,
Småbråten Didrik René,
Tang YunLong,
Prasad Bhagwati,
Saremi Sahar,
Ozgur Rustem,
Thakare Vishal,
Steinhardt Rachel A.,
Holtz Megan E.,
Stoica Vladimir Alexandru,
Martin Lane W.,
Schlom Darrel G.,
Selbach Sverre Magnus,
Ramesh Ramamoorthy
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.202000508
Subject(s) - ferroelectricity , materials science , polarization (electrochemistry) , coercivity , switching time , condensed matter physics , commutation , voltage , dispersion (optics) , optoelectronics , optics , dielectric , electrical engineering , chemistry , physics , engineering
Results of switching behavior of the improper ferroelectric LuFeO 3 are presented. Using a model set of films prepared under controlled chemical and growth‐rate conditions, it is shown that defects can reduce the quasi‐static switching voltage by up to 40% in qualitative agreement with first‐principles calculations. Switching studies show that the coercive field has a stronger frequency dispersion for the improper ferroelectrics compared to a proper ferroelectric such as PbTiO 3 . It is concluded that the primary structural order parameter controls the switching dynamics of such improper ferroelectrics.