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UV Light‐Emitting Diodes: Enhancement of Heat Dissipation in Ultraviolet Light‐Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer (Adv. Mater. 29/2019)
Author(s) -
Ci Haina,
Chang Hongliang,
Wang Ruoyu,
Wei Tongbo,
Wang Yunyu,
Chen Zhaolong,
Sun Yuanwei,
Dou Zhipeng,
Liu Zhiqiang,
Li Jinmin,
Gao Peng,
Liu Zhongfan
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201970211
Subject(s) - materials science , optoelectronics , graphene , light emitting diode , layer (electronics) , buffer (optical fiber) , diode , ultraviolet , sapphire , dissipation , substrate (aquarium) , heat sink , optics , composite material , nanotechnology , laser , telecommunications , physics , engineering , computer science , thermodynamics , oceanography , electrical engineering , geology
The use of vertically oriented graphene nanowalls as a buffer layer for the growth of high‐quality AlN film on a sapphire substrate to improve heat dissipation is proposed by Tongbo Wei, Zhiqiang Liu, Peng Gao, Zhongfan Liu, and co‐workers in article number 1901624. Thus, their as‐fabricated light‐emitting diode shows a 37% increasement of light output power under a high injection current (350 mA) due to the temperature reduction and strain relaxation.