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Resistive Switching: Unraveling the Origin and Mechanism of Nanofilament Formation in Polycrystalline SrTiO 3 Resistive Switching Memories (Adv. Mater. 28/2019)
Author(s) -
Kwon DeokHwang,
Lee Shinbuhm,
Kang Chan Soon,
Choi Yong Seok,
Kang Sung Jin,
Cho Hae Lim,
Sohn Woonbae,
Jo Janghyun,
Lee SeungYong,
Oh Kyu Hwan,
Noh Tae Won,
De Souza Roger A.,
Martin Manfred,
Kim Miyoung
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201970205
Subject(s) - protein filament , materials science , crystallite , resistive touchscreen , strontium titanate , transmission electron microscopy , phase (matter) , nanotechnology , condensed matter physics , chemical physics , thin film , composite material , chemistry , electrical engineering , physics , metallurgy , engineering , organic chemistry
Resistive switching in strontium titanate (SrTiO 3 ) generally involves the formation of a highly conducting filament upon application of a suitable applied bias. In article number 1901322, Manfred Martin, Miyoung Kim, and co‐workers use in situ transmission electron microscopy to identify the conducting filament phase and the accompanying phase. On this basis they establish not only a thermodynamic model that explains why filaments form (with specific compositions) but also a kinetic model to describe why many filaments are nucleated but only one wins the race.