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Schottky–Mott Limit: Gate‐Tunable Graphene–WSe 2 Heterojunctions at the Schottky–Mott Limit (Adv. Mater. 24/2019)
Author(s) -
LaGasse Samuel W.,
Dhakras Prathamesh,
Watanabe Kenji,
Taniguchi Takashi,
Lee Ji Ung
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201970169
Subject(s) - materials science , schottky diode , heterojunction , graphene , schottky barrier , van der waals force , condensed matter physics , semiconductor , mott insulator , fermi level , mott transition , limit (mathematics) , fermi energy , optoelectronics , nanotechnology , physics , quantum mechanics , molecule , electron , hubbard model , mathematical analysis , mathematics , superconductivity , diode
For many years, metal–semiconductor interfaces have suffered from defective interfaces, causing their energy band alignment to diverge from the Schottky–Mott rule. The van der Waals interface between graphene and transition metal dichalcogenide WSe 2 takes the Schottky–Mott rule from the textbook to the laboratory. Because of the lack of Fermi‐level pinning, in article number 1901392 , Samuel W. LaGasse, Ji Ung Lee, and co‐workers achieve perfect tuning of the graphene–WSe 2 Schottky barrier.