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Perovskite Memory Devices: High‐Performance Solution‐Processed Organo‐Metal Halide Perovskite Unipolar Resistive Memory Devices in a Cross‐Bar Array Structure (Adv. Mater. 21/2019)
Author(s) -
Kang Keehoon,
Ahn Heebeom,
Song Younggul,
Lee Woocheol,
Kim Junwoo,
Kim Youngrok,
Yoo Daekyoung,
Lee Takhee
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201970149
Subject(s) - materials science , perovskite (structure) , halide , resistive random access memory , fabrication , optoelectronics , resistive touchscreen , non volatile memory , bar (unit) , yield (engineering) , metal , nanotechnology , chemical engineering , electrical engineering , inorganic chemistry , voltage , composite material , metallurgy , medicine , chemistry , alternative medicine , physics , pathology , meteorology , engineering
Nonvolatile memory devices based on unipolar resistive switching in a solution‐processed organo‐metal halide perovskite are reported by Keehoon Kang, Takhee Lee, and co‐workers in article number 1804841 . A facile synthesis of the perovskite layer with a nonhalide precursor allows the reliable fabrication of high‐yield cross‐bar array memory devices with a desirable ON/OFF ratio and electrical stability, which can potentially open a solution‐processing route for realizing high‐density resistive random‐access memory devices.
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