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2D Materials: Metal‐Guided Selective Growth of 2D Materials: Demonstration of a Bottom‐Up CMOS Inverter (Adv. Mater. 18/2019)
Author(s) -
Chiu MingHui,
Tang HaoLing,
Tseng ChienChih,
Han Yimo,
Aljarb Areej,
Huang JingKai,
Wan Yi,
Fu JuiHan,
Zhang Xixiang,
Chang WenHao,
Muller David A.,
Takenobu Taishi,
Tung Vincent,
Li LainJong
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201970132
Subject(s) - materials science , heterojunction , nanotechnology , transition metal , inverter , cmos , electronics , metal , optoelectronics , electrical engineering , metallurgy , catalysis , organic chemistry , voltage , engineering , chemistry
A method to concurrently and location‐selectively grow dissimilar transition‐metal dichalcogenides (TMDs) is of high importance for next‐generation 2D, nonsilicon electronics. In article number 1900861 , Vincent Tung, Lain‐Jong Li, and co‐workers demonstrate that the precise control of transition‐metal‐precursor vapor pressure renders successful lateral and vertical heterojunction growth, as well as growth of p‐ and n‐type TMDs at desired locations, providing a new strategy toward future (opto)electronic applications.