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Ferromagnetic Semiconductors: VI 3 —a New Layered Ferromagnetic Semiconductor (Adv. Mater. 17/2019)
Author(s) -
Kong Tai,
Stolze Karoline,
Timmons Erik I.,
Tao Jing,
Ni Danrui,
Guo Shu,
Yang Zoë,
Prozorov Ruslan,
Cava Robert J.
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201970126
Subject(s) - ferromagnetism , materials science , condensed matter physics , semiconductor , van der waals force , magnetic semiconductor , optoelectronics , physics , molecule , quantum mechanics
Discovering new magnetic materials for the fabrication of 2D device architectures is of great interest. In article number 1808074 , Tai Kong, Robert J. Cava, and co‐workers report the discovery of a new van der Waals ferromagnetic semiconductor, VI 3 , which goes through a structural transition at 78 K and a subsequent ferromagnetic transition at 49 K. Stripe‐like ferromagnetic domains on top of larger, structural domains are shown in the back‐cover image.