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Band Engineering: Band Structure Engineering of Interfacial Semiconductors Based on Atomically Thin Lead Iodide Crystals (Adv. Mater. 17/2019)
Author(s) -
Sun Yan,
Zhou Zishu,
Huang Zhen,
Wu Jiangbin,
Zhou Liujiang,
Cheng Yang,
Liu Jinqiu,
Zhu Chao,
Yu Maotao,
Yu Peng,
Zhu Wei,
Liu Yue,
Zhou Jian,
Liu Bowen,
Xie Hongguang,
Cao Yi,
Li Hai,
Wang Xinran,
Liu Kaihui,
Wang Xiaoyong,
Wang Jianpu,
Wang Lin,
Huang Wei
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201970121
Subject(s) - materials science , interfacing , semiconductor , monolayer , optoelectronics , photodetector , diode , electronic band structure , nanotechnology , computer science , physics , condensed matter physics , computer hardware
In article number 1806562 , Lin Wang, Wei Huang, and co‐workers describe the synthesis of PbI 2 with a unique electronic structure down to the atomic scale by a solution method, and construct versatile interfacial semiconductors via band alignment engineering. As an illustrative example, MoS 2 , WS 2 , and WSe 2 monolayers show completely distinct light–matter interactions when interfacing with PbI 2 , which may further widen their applications in on‐chip optoelectronic devices, such as light‐emitting diodes, photodetectors, and photovoltaic devices.