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Memory Devices: Symmetric Ultrafast Writing and Erasing Speeds in Quasi‐Nonvolatile Memory via van der Waals Heterostructures (Adv. Mater. 11/2019)
Author(s) -
Li Jingyu,
Liu Lan,
Chen Xiaozhang,
Liu Chunsen,
Wang Jianlu,
Hu Weida,
Zhang David Wei,
Zhou Peng
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201970081
Subject(s) - ultrashort pulse , materials science , van der waals force , non volatile memory , heterojunction , optoelectronics , nanotechnology , optics , physics , quantum mechanics , molecule , laser
In article number 1808035 , Peng Zhou and co‐workers demonstrate a symmetric ultrafast writing and erasing speed in quasi‐nonvolatile memory via van der Waals heterostructures. The erase‐0 speed of the memory is significantly shortened to 40 ns without reducing the ultrafast write‐1 speed. The superior performance suggests that the optimized quasi‐nonvolatile memory has great application prospects in high‐speed and low‐power memory technology.