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Organic Field‐Effect Transistors: Enhanced Charge Injection Properties of Organic Field‐Effect Transistor by Molecular Implantation Doping (Adv. Mater. 10/2019)
Author(s) -
Kim Youngrok,
Chung Seungjun,
Cho Kyungjune,
Harkin David,
Hwang WangTaek,
Yoo Daekyoung,
Kim JaeKeun,
Lee Woocheol,
Song Younggul,
Ahn Heebeom,
Hong Yongtaek,
Sirringhaus Henning,
Kang Keehoon,
Lee Takhee
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201970073
Subject(s) - materials science , doping , dopant , field effect transistor , transistor , contact resistance , optoelectronics , organic semiconductor , organic electronics , organic field effect transistor , electrode , nanotechnology , electrical engineering , voltage , chemistry , layer (electronics) , engineering
A selective contact‐doping technique based on solid‐state diffusion is developed by Keehoon Kang, Takhee Lee, and co‐workers in article 1806697 for enhancing carrier injection in organic field‐effect transistors. The dopant molecules become structurally implanted in well‐defined regions of the polymer film near the contact electrodes. This new strategy of contact doping achieves a markedly improved contact resistance and device stability in contact‐doped organic field‐effect transistors.