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Data Storage: Self‐Assembled Networked PbS Distribution Quantum Dots for Resistive Switching and Artificial Synapse Performance Boost of Memristors (Adv. Mater. 7/2019)
Author(s) -
Yan Xiaobing,
Pei Yifei,
Chen Huawei,
Zhao Jianhui,
Zhou Zhenyu,
Wang Hong,
Zhang Lei,
Wang Jingjuan,
Li Xiaoyan,
Qin Cuiya,
Wang Gong,
Xiao Zuoao,
Zhao Qianlong,
Wang Kaiyang,
Li Hui,
Ren Deliang,
Liu Qi,
Zhou Hao,
Chen Jingsheng,
Zhou Peng
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201970049
Subject(s) - memristor , materials science , quantum dot , nanotechnology , resistive random access memory , miniaturization , self assembly , neuromorphic engineering , optoelectronics , artificial neural network , computer science , electronic engineering , electrical engineering , artificial intelligence , voltage , engineering
In article number 1805284 , Xiaobing Yan, Peng Zhou, and co‐workers demonstrate that the ordered arrangement of self‐assembled PbS quantum dots (QDs) enhances the localized electrical field in a memristor device, which can efficiently guide the growth direction of the conducting filaments and improve the uniformity of the switching parameters of resistive random access memory. Furthermore, biosynaptic functions and plasticity are implemented successfully in the device with the self‐assembled PbS QDs. This work could significantly expand existing QD applications and facilitate the development of the miniaturization of artificial neural systems.