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Photodetectors: Ultrahigh‐Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe 2 /Graphene/SnS 2 p–g–n Junctions (Adv. Mater. 6/2019)
Author(s) -
Li Alei,
Chen Qianxue,
Wang Peipei,
Gan Yuan,
Qi Tailei,
Wang Peng,
Tang Fangdong,
Wu Judy Z.,
Chen Rui,
Zhang Liyuan,
Gong Youpin
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201970040
Subject(s) - photodetector , graphene , materials science , optoelectronics , broadband , heterojunction , dielectric , absorption (acoustics) , sensitivity (control systems) , exciton , van der waals force , nanotechnology , optics , physics , condensed matter physics , engineering , quantum mechanics , electronic engineering , molecule , composite material
In article number 1805656 , Rui Chen, Liyuan Zhang, Youpin Gong, and co‐workers develop an h‐BN/MoTe 2 /graphene/SnS 2 /h‐BN van der Waals heterostructure to realize an ultrahigh‐sensitivity broadband (405–1550 nm) photodetector, due to its unique advantages for high‐efficiency light absorption and exciton dissociation. Graphene plays a key role in enhancing the sensitivity and broadening the spectral range, providing a viable approach toward future ultrahigh sensitivity and broadband photodetectors.