Photodetectors: Ultrahigh‐Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe 2 /Graphene/SnS 2  p–g–n Junctions (Adv. Mater. 6/2019) | Zendy

Li Alei | Zendy; Chen Qianxue | Zendy; Wang Peipei | Zendy; Gan Yuan | Zendy; Qi Tailei | Zendy; Wang Peng | Zendy; Tang Fangdong | Zendy; Wu Judy Z. | Zendy; Chen Rui | Zendy; Zhang Liyuan | Zendy; Gong Youpin | Zendy

Premium

Photodetectors: Ultrahigh‐Sensitive Broadband Photodetectors Based on Dielectric Shielded MoTe 2 /Graphene/SnS 2 p–g–n Junctions (Adv. Mater. 6/2019)

Author(s) -

Li Alei,

Chen Qianxue,

Wang Peipei,

Gan Yuan,

Qi Tailei,

Wang Peng,

Tang Fangdong,

Wu Judy Z.,

Chen Rui,

Zhang Liyuan,

Gong Youpin

Publication year - 2019

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201970040

Subject(s) - photodetector , graphene , materials science , optoelectronics , broadband , heterojunction , dielectric , absorption (acoustics) , sensitivity (control systems) , exciton , van der waals force , nanotechnology , optics , physics , condensed matter physics , engineering , quantum mechanics , electronic engineering , molecule , composite material

In article number 1805656 , Rui Chen, Liyuan Zhang, Youpin Gong, and co‐workers develop an h‐BN/MoTe 2 /graphene/SnS 2 /h‐BN van der Waals heterostructure to realize an ultrahigh‐sensitivity broadband (405–1550 nm) photodetector, due to its unique advantages for high‐efficiency light absorption and exciton dissociation. Graphene plays a key role in enhancing the sensitivity and broadening the spectral range, providing a viable approach toward future ultrahigh sensitivity and broadband photodetectors.

This content is not available in your region!

Continue researching here.

Having issues? You can contact us here

Accelerating Research