Premium
Configurable Resistive Response in BaTiO 3 Ferroelectric Memristors via Electron Beam Radiation
Author(s) -
Molinari Alan,
Witte Ralf,
Neelisetty Krishna Kanth,
Gorji Saleh,
Kübel Christian,
Münch Ingo,
Wöhler Franziska,
Hahn Lothar,
Hengsbach Stefan,
Bade Klaus,
Hahn Horst,
Kruk Robert
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201907541
Subject(s) - memristor , ferroelectricity , materials science , optoelectronics , neuromorphic engineering , non volatile memory , resistive touchscreen , nanotechnology , cathode ray , polarization (electrochemistry) , electron , electrical engineering , computer science , dielectric , physics , chemistry , quantum mechanics , machine learning , artificial neural network , engineering
Ferroelectric oxide memristors are currently in the highlights of a thriving area of research aiming at the development of nonvolatile, adaptive memories for applications in neuromorphic computing. However, to date a precise control of synapse‐like functionalities by adjusting the interplay between ferroelectric polarization and resistive switching processes is still an ongoing challenge. Here, it is shown that by means of controlled electron beam radiation, a prototypical ferroelectric film of BaTiO 3 can be turned into a memristor with multiple configurable resistance states. Ex situ and in situ analyses of current/voltage characteristics upon electron beam exposure confirm the quasi‐continuous variation of BaTiO 3 resistance up to two orders of magnitude under the typical experimental conditions employed in electron beam patterning and characterization techniques. These results demonstrate an unprecedented effective route to locally and scalably engineering multilevel ferroelectric memristors via application of moderate electron beam radiation.