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Thermal Effects on the Crystallization Kinetics, and Interfacial Adhesion of Single‐Crystal Phase‐Change Gallium
Author(s) -
Yunusa Muhammad,
Lahlou Aliénor,
Sitti Metin
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201907453
Subject(s) - materials science , supercooling , crystallization , gallium , thermal conductivity , annealing (glass) , melting point , dielectric , phase (matter) , substrate (aquarium) , chemical engineering , composite material , chemical physics , thermodynamics , metallurgy , chemistry , physics , optoelectronics , organic chemistry , engineering , oceanography , geology
Although substrates play an important role upon crystallization of supercooled liquids, the influences of surface temperature and thermal property have remained elusive. Here, the crystallization of supercooled phase‐change gallium (Ga) on substrates with different thermal conductivity is studied. The effect of interfacial temperature on the crystallization kinetics, which dictates thermo‐mechanical stresses between the substrate and the crystallized Ga, is investigated. At an elevated surface temperature, close to the melting point of Ga, an extended single‐crystal growth of Ga on dielectric substrates due to layering effect and annealing is realized without the application of external fields. Adhesive strength at the interfaces depends on the thermal conductivity and initial surface temperature of the substrates. This insight can be applicable to other liquid metals for industrial applications, and sheds more light on phase‐change memory crystallization.