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TFT Channel Materials for Display Applications: From Amorphous Silicon to Transition Metal Dichalcogenides
Author(s) -
Shim Gi Woong,
Hong Woonggi,
Cha JunHwe,
Park Jung Hwan,
Lee Keon Jae,
Choi SungYool
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201907166
Subject(s) - materials science , thin film transistor , amorphous silicon , optoelectronics , silicon , amorphous solid , polycrystalline silicon , diode , channel (broadcasting) , oxide thin film transistor , flexible display , nanotechnology , transistor , engineering physics , semiconductor , crystalline silicon , electrical engineering , layer (electronics) , voltage , chemistry , organic chemistry , engineering
As the need for super‐high‐resolution displays with various form factors has increased, it has become necessary to produce high‐performance thin‐film transistors (TFTs) that enable faster switching and higher current driving of each pixel in the display. Over the past few decades, hydrogenated amorphous silicon (a‐Si:H) has been widely utilized as a TFT channel material. More recently, to meet the requirement of new types of displays such as organic light‐emitting diode displays, and also to overcome the performance and reliability issues of a‐Si:H, low‐temperature polycrystalline silicon and amorphous oxide semiconductors have partly replaced a‐Si:H channel materials. Basic material properties and device structures of TFTs in commercial displays are explored, and then the potential of atomically thin layered transition metal dichalcogenides as next‐generation channel materials is discussed.