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Current‐Induced Spin–Orbit Torques for Spintronic Applications
Author(s) -
Ryu Jeongchun,
Lee Soogil,
Lee KyungJin,
Park ByongGuk
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201907148
Subject(s) - spintronics , magnetization , materials science , torque , neuromorphic engineering , condensed matter physics , spin pumping , magnetic field , nanotechnology , spin polarization , engineering physics , computer science , spin hall effect , ferromagnetism , physics , quantum mechanics , machine learning , artificial neural network , electron
Control of magnetization in magnetic nanostructures is essential for development of spintronic devices because it governs fundamental device characteristics such as energy consumption, areal density, and operation speed. In this respect, spin–orbit torque (SOT), which originates from the spin–orbit interaction, has been widely investigated due to its efficient manipulation of the magnetization using in‐plane current. SOT spearheads novel spintronic applications including high‐speed magnetic memories, reconfigurable logics, and neuromorphic computing. Herein, recent advances in SOT research, highlighting the considerable benefits and challenges of SOT‐based spintronic devices, are reviewed. First, the materials and structural engineering that enhances SOT efficiency are discussed. Then major experimental results for field‐free SOT switching of perpendicular magnetization are summarized, which includes the introduction of an internal effective magnetic field and the generation of a distinct spin current with out‐of‐plane spin polarization. Finally, advanced SOT functionalities are presented, focusing on the demonstration of reconfigurable and complementary operation in spin logic devices.