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Ferroelectric Domain Wall Motion in Freestanding Single‐Crystal Complex Oxide Thin Film
Author(s) -
Bakaul Saidur R.,
Kim Jaegyu,
Hong Seungbum,
Cherukara Mathew J.,
Zhou Tao,
Stan Liliana,
Serrao Claudy R.,
Salahuddin Sayeef,
PetfordLong Amanda K.,
Fong Dillon D.,
Holt Martin V.
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201907036
Subject(s) - materials science , mesoscopic physics , ferroelectricity , epitaxy , oxide , domain wall (magnetism) , polarization (electrochemistry) , condensed matter physics , thin film , substrate (aquarium) , composite material , crystallography , nanotechnology , optoelectronics , layer (electronics) , chemistry , physics , magnetization , oceanography , quantum mechanics , geology , magnetic field , dielectric , metallurgy
Ferroelectric domain walls in single‐crystal complex oxide thin films are found to be orders of magnitude slower when the interfacial bonds with the heteroepitaxial substrate are broken to create a freestanding film. This drastic change in domain wall kinetics does not originate from the alteration of epitaxial strain; rather, it is correlated with the structural ripples at mesoscopic length scale and associated flexoelectric effects induced in the freestanding films. In contrast, the effects of the bond‐breaking on the local static ferroelectric properties of both top and bottom layers of the freestanding films, such as domain wall width and spontaneous polarization, are modest and governed by the change in epitaxy‐induced compressive strain.