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Efficient Energy Funneling in Quasi‐2D Perovskites: From Light Emission to Lasing
Author(s) -
Lei Lei,
Seyitliyev Dovletgeldi,
Stuard Samuel,
Mendes Juliana,
Dong Qi,
Fu Xiangyu,
Chen YiAn,
He Siliang,
Yi Xueping,
Zhu Liping,
Chang ChihHao,
Ade Harald,
Gundogdu Kenan,
So Franky
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201906571
Subject(s) - materials science , band gap , optoelectronics , lasing threshold , perovskite (structure) , exciton , spontaneous emission , thin film , laser , optics , nanotechnology , condensed matter physics , crystallography , wavelength , chemistry , physics
Quasi‐2D Ruddlesden–Popper halide perovskites with a large exciton binding energy, self‐assembled quantum wells, and high quantum yield draw attention for optoelectronic device applications. Thin films of these quasi‐2D perovskites consist of a mixture of domains having different dimensionality, allowing energy funneling from lower‐dimensional nanosheets (high‐bandgap domains) to 3D nanocrystals (low‐bandgap domains). High‐quality quasi‐2D perovskite (PEA) 2 (FA) 3 Pb 4 Br 13 films are fabricated by solution engineering. Grazing‐incidence wide‐angle X‐ray scattering measurements are conducted to study the crystal orientation, and transient absorption spectroscopy measurements are conducted to study the charge‐carrier dynamics. These data show that highly oriented 2D crystal films have a faster energy transfer from the high‐bandgap domains to the low‐bandgap domains (<0.5 ps) compared to the randomly oriented films. High‐performance light‐emitting diodes can be realized with these highly oriented 2D films. Finally, amplified spontaneous emission with a low threshold 4.16 µJ cm −2 is achieved and distributed feedback lasers are also demonstrated. These results show that it is important to control the morphology of the quasi‐2D films to achieve efficient energy transfer, which is a critical requirement for light‐emitting devices.