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Coupling Topological Insulator SnSb 2 Te 4 Nanodots with Highly Doped Graphene for High‐Rate Energy Storage
Author(s) -
Wu Zhibin,
Liang Gemeng,
Pang Wei Kong,
Zhou Tengfei,
Cheng Zhenxiang,
Zhang Wenchao,
Liu Ye,
Johannessen Bernt,
Guo Zaiping
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201905632
Subject(s) - materials science , topological insulator , graphene , nanodot , anode , nanotechnology , electrochemistry , energy storage , ion , doping , electrode , topology (electrical circuits) , chemical engineering , optoelectronics , condensed matter physics , chemistry , power (physics) , physics , mathematics , quantum mechanics , combinatorics , engineering
Topological insulators have spurred worldwide interest, but their advantageous properties have scarcely been explored in terms of electrochemical energy storage, and their high‐rate capability and long‐term cycling stability still remain a significant challenge to harvest. p‐Type topological insulator SnSb 2 Te 4 nanodots anchoring on few‐layered graphene (SnSb 2 Te 4 /G) are synthesized as a stable anode for high‐rate lithium‐ion batteries and potassium‐ion batteries through a ball‐milling method. These SnSb 2 Te 4 /G composite electrodes show ultralong cycle lifespan (478 mAh g −1 at 1 A g −1 after 1000 cycles) and excellent rate capability (remaining 373 mAh g −1 even at 10 A g −1 ) in Li‐ion storage owing to the rapid ion transport accelerated by the PN heterojunction, virtual electron highways provided by the conductive topological surface state, and extraordinary pseudocapacitive contribution, whose excellent phase reversibility is confirmed by synchrotron in situ X‐ray powder diffraction. Surprisingly, durable lifespan even at practical levels of mass loading (>10 mg cm −2 ) for Li‐ion storage and excellent K‐ion storage performance are also observed. This work provides new insights for designing high‐rate electrode materials by boosting conductive topological surfaces, atomic doping, and the interface interaction.