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A Low‐Current and Analog Memristor with Ru as Mobile Species
Author(s) -
Yoon Jung Ho,
Zhang Jiaming,
Lin Peng,
Upadhyay Navnidhi,
Yan Peng,
Liu Yuzi,
Xia Qiangfei,
Yang J. Joshua
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201904599
Subject(s) - materials science , memristor , optoelectronics , stack (abstract data type) , scalability , reliability (semiconductor) , transmission electron microscopy , nanotechnology , electrical engineering , computer science , power (physics) , programming language , engineering , physics , quantum mechanics , database
The switching parameters and device performance of memristors are predominately determined by their mobile species and matrix materials. Devices with oxygen or oxygen vacancies as the mobile species usually exhibit a great retention but also need a relatively high switching current (e.g., >30 µA), while devices with Ag or Cu as cation mobile species do not require a high switching current but usually show a poor retention. Here, Ru is studied as a new type of mobile species for memristors to achieve low switching current, fast speed, good reliability, scalability, and analog switching property simultaneously. An electrochemical metallization‐like memristor with a stack of Pt/Ta 2 O 5 /Ru is developed. Migration of Ru ions is revealed by energy‐dispersive X‐ray spectroscopy mapping and in situ transmission electron microscopy within a sub‐10 nm active device area before and after switching. The results open up a new avenue to engineer memristors for desired properties.