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Overcoming the Limits of the Interfacial Dzyaloshinskii–Moriya Interaction by Antiferromagnetic Order in Multiferroic Heterostructures
Author(s) -
Wang Han,
Dai Yingying,
Liu Zhongran,
Xie Qidong,
Liu Chao,
Lin Weinan,
Liu Liang,
Yang Ping,
Wang John,
Venkatesan Thirumalai Venky,
Chow Gan Moog,
Tian He,
Zhang Zhidong,
Chen Jingsheng
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201904415
Subject(s) - spintronics , antiferromagnetism , skyrmion , condensed matter physics , materials science , ferromagnetism , multiferroics , heterojunction , topology (electrical circuits) , nanotechnology , ferroelectricity , physics , optoelectronics , mathematics , combinatorics , dielectric
Topologically protected magnetic states have a variety of potential applications in future spintronics owing to their nanoscale size (<100 nm) and unique dynamics. These fascinating states, however, usually are located at the interfaces or surfaces of ultrathin systems due to the short interaction range of the Dzyaloshinskii–Moriya interaction (DMI). Here, magnetic topological states in a 40‐unit cells (16 nm) SrRuO 3 layer are successfully created via an interlayer exchange coupling mechanism and the interfacial DMI. By controlling the thickness of an antiferromagnetic and ferromagnetic layer, interfacial ionic polarization, as well as the transformation between ferromagnetic and magnetic topological states, can be modulated. Using micromagnetic simulations, the formation and stability of robust magnetic skyrmions in SrRuO 3 /BiFeO 3 heterostructures are elucidated. Magnetic skyrmions in thick multiferroic heterostructures are promising for the development of topological electronics as well as rendering a practical approach to extend the interfacial topological phenomena to bulk via antiferromagnetic order.