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Room‐Temperature Stimulated Emission and Lasing in Recrystallized Cesium Lead Bromide Perovskite Thin Films
Author(s) -
Pourdavoud Neda,
Haeger Tobias,
Mayer Andre,
Cegielski Piotr Jacek,
Giesecke Anna Lena,
Heiderhoff Ralf,
Olthof Selina,
Zaefferer Stefan,
Shutsko Ivan,
Henkel Andreas,
BeckerKoch David,
Stein Markus,
Cehovski Marko,
Charfi Ouacef,
Johannes HansHermann,
Rogalla Detlef,
Lemme Max Christian,
Koch Martin,
Vaynzof Yana,
Meerholz Klaus,
Kowalsky Wolfgang,
Scheer HellaChristin,
Görrn Patrick,
Riedl Thomas
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201903717
Subject(s) - materials science , perovskite (structure) , lasing threshold , halide , optoelectronics , photoluminescence , thin film , radioluminescence , caesium , laser , exciton , light emitting diode , spontaneous emission , substrate (aquarium) , diode , nanometre , nanotechnology , optics , chemical engineering , wavelength , inorganic chemistry , scintillator , composite material , condensed matter physics , chemistry , physics , oceanography , detector , geology , engineering
Cesium lead halide perovskites are of interest for light‐emitting diodes and lasers. So far, thin‐films of CsPbX 3 have typically afforded very low photoluminescence quantum yields (PL‐QY < 20%) and amplified spontaneous emission (ASE) only at cryogenic temperatures, as defect related nonradiative recombination dominated at room temperature (RT). There is a current belief that, for efficient light emission from lead halide perovskites at RT, the charge carriers/excitons need to be confined on the nanometer scale, like in CsPbX 3 nanoparticles (NPs). Here, thin films of cesium lead bromide, which show a high PL‐QY of 68% and low‐threshold ASE at RT, are presented. As‐deposited layers are recrystallized by thermal imprint, which results in continuous films (100% coverage of the substrate), composed of large crystals with micrometer lateral extension. Using these layers, the first cesium lead bromide thin‐film distributed feedback and vertical cavity surface emitting lasers with ultralow threshold at RT that do not rely on the use of NPs are demonstrated. It is foreseen that these results will have a broader impact beyond perovskite lasers and will advise a revision of the paradigm that efficient light emission from CsPbX 3 perovskites can only be achieved with NPs.