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Chemically Tuned p‐ and n‐Type WSe 2 Monolayers with High Carrier Mobility for Advanced Electronics
Author(s) -
Ji Hyun Goo,
SolísFernández Pablo,
Yoshimura Daisuke,
Maruyama Mina,
Endo Takahiko,
Miyata Yasumitsu,
Okada Susumu,
Ago Hiroki
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201903613
Subject(s) - materials science , monolayer , doping , electron mobility , field effect transistor , semiconductor , nanotechnology , optoelectronics , silicon , x ray photoelectron spectroscopy , band gap , transistor , electrical engineering , chemical engineering , engineering , voltage
Monolayers of transition metal dichalcogenides (TMDCs) have attracted a great interest for post‐silicon electronics and photonics due to their high carrier mobility, tunable bandgap, and atom‐thick 2D structure. With the analogy to conventional silicon electronics, establishing a method to convert TMDC to p‐ and n‐type semiconductors is essential for various device applications, such as complementary metal‐oxide‐semiconductor (CMOS) circuits and photovoltaics. Here, a successful control of the electrical polarity of monolayer WSe 2 is demonstrated by chemical doping. Two different molecules, 4‐nitrobenzenediazonium tetrafluoroborate and diethylenetriamine, are utilized to convert ambipolar WSe 2 field‐effect transistors (FETs) to p‐ and n‐type, respectively. Moreover, the chemically doped WSe 2 show increased effective carrier mobilities of 82 and 25 cm 2 V −1 s −1 for holes and electrons, respectively, which are much higher than those of the pristine WSe 2 . The doping effects are studied by photoluminescence, Raman, X‐ray photoelectron spectroscopy, and density functional theory. Chemically tuned WSe 2 FETs are integrated into CMOS inverters, exhibiting extremely low power consumption ( ≈ 0.17 nW). Furthermore, a p‐n junction within single WSe 2 grain is realized via spatially controlled chemical doping. The chemical doping method for controlling the transport properties of WSe 2 will contribute to the development of TMDC‐based advanced electronics.