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Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications
Author(s) -
Yu Jiadong,
Wang Lai,
Hao Zhibiao,
Luo Yi,
Sun Changzheng,
Wang Jian,
Han Yanjun,
Xiong Bing,
Li Hongtao
Publication year - 2020
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201903407
Subject(s) - materials science , transfer printing , nanotechnology , nitride , epitaxy , semiconductor , van der waals force , hexagonal boron nitride , optoelectronics , graphene , heterojunction , sapphire , composite material , optics , laser , chemistry , physics , organic chemistry , layer (electronics) , molecule
III‐nitride semiconductors have attracted considerable attention in recent years owing to their excellent physical properties and wide applications in solid‐state lighting, flat‐panel displays, and solar energy and power electronics. Generally, GaN‐based devices are heteroepitaxially grown on c ‐plane sapphire, Si (111), or 6H‐SiC substrates. However, it is very difficult to release the GaN‐based films from such single‐crystalline substrates and transfer them onto other foreign substrates. Consequently, it is difficult to meet the ever‐increasing demand for wearable and foldable applications. On the other hand, sp 2 ‐bonded two‐dimensional (2D) materials, which exhibit hexagonal in‐plane lattice arrangements and weakly bonded layers, can be transferred onto flexible substrates with ease. Hence, flexible III‐nitride devices can be implemented through such 2D release layers. In this progress report, the recent advances in the different strategies for the growth of III‐nitrides based on 2D materials are reviewed, with a focus on van der Waals epitaxy and transfer printing. Various attempts are presented and discussed herein, including the different kinds of 2D materials (graphene, hexagonal boron nitride, and transition metal dichalcogenides) used as release layers. Finally, current challenges and future perspectives regarding the development of flexible III‐nitride devices are discussed.