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Investigation of Electrode Electrochemical Reactions in CH 3 NH 3 PbBr 3 Perovskite Single‐Crystal Field‐Effect Transistors
Author(s) -
Wang Junzhan,
Senanayak Satyaprasad P.,
Liu Jie,
Hu Yuanyuan,
Shi Yanjun,
Li Zelun,
Zhang Caixin,
Yang Bingyan,
Jiang Longfeng,
Di Dawei,
Ievlev Anton V.,
Ovchinnikova Olga S.,
Ding Tao,
Deng Huixiong,
Tang Liming,
Guo Yunlong,
Wang Jianpu,
Xiao Kai,
Venkateshvaran Deepak,
Jiang Lang,
Zhu Daoben,
Sirringhaus Henning
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201902618
Subject(s) - materials science , perovskite (structure) , optoelectronics , halide , field effect transistor , fabrication , diode , heterojunction , electrode , single crystal , crystal (programming language) , nanotechnology , transistor , inorganic chemistry , electrical engineering , crystallography , voltage , chemistry , computer science , medicine , programming language , alternative medicine , engineering , pathology
Abstract Optoelectronic devices based on metal halide perovskites, including solar cells and light‐emitting diodes, have attracted tremendous research attention globally in the last decade. Due to their potential to achieve high carrier mobilities, organic–inorganic hybrid perovskite materials can enable high‐performance, solution‐processed field‐effect transistors (FETs) for next‐generation, low‐cost, flexible electronic circuits and displays. However, the performance of perovskite FETs is hampered predominantly by device instabilities, whose origin remains poorly understood. Here, perovskite single‐crystal FETs based on methylammonium lead bromide are studied and device instabilities due to electrochemical reactions at the interface between the perovskite and gold source–drain top contacts are investigated. Despite forming the contacts by a gentle, soft lamination method, evidence is found that even at such “ideal” interfaces, a defective, intermixed layer is formed at the interface upon biasing of the device. Using a bottom‐contact, bottom‐gate architecture, it is shown that it is possible to minimize such a reaction through a chemical modification of the electrodes, and this enables fabrication of perovskite single‐crystal FETs with high mobility of up to ≈15 cm 2 V −1 s −1 at 80 K. This work addresses one of the key challenges toward the realization of high‐performance solution‐processed perovskite FETs.