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On the Role of Contact Resistance and Electrode Modification in Organic Electrochemical Transistors
Author(s) -
Paterson Alexandra F.,
Faber Hendrik,
Savva Achilleas,
Nikiforidis Georgios,
Gedda Murali,
Hidalgo Tania C.,
Chen Xingxing,
McCulloch Iain,
Anthopoulos Thomas D.,
Inal Sahika
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201902291
Subject(s) - materials science , electrode , contact resistance , wetting , nanotechnology , surface modification , transistor , semiconductor , monolayer , contact angle , optoelectronics , composite material , layer (electronics) , chemical engineering , chemistry , electrical engineering , voltage , engineering
Contact resistance is renowned for its unfavorable impact on transistor performance. Despite its notoriety, the nature of contact resistance in organic electrochemical transistors (OECTs) remains unclear. Here, by investigating the role of contact resistance in n‐type OECTs, the first demonstration of source/drain‐electrode surface modification for achieving state‐of‐the‐art n‐type OECTs is reported. Specifically, thiol‐based self‐assembled monolayers (SAMs), 4‐methylbenzenethiol (MBT) and pentafluorobenzenethiol (PFBT), are used to investigate contact resistance in n‐type accumulation‐mode OECTs made from the hydrophilic copolymer P‐90, where the deliberate functionalization of the gold source/drain electrodes decreases and increases the energetic mismatch at the electrode/semiconductor interface, respectively. Although MBT treatment is found to increase the transconductance three‐fold, contact resistance is not found to be the dominant factor governing OECT performance. Additional morphology and surface energy investigations show that increased performance comes from SAM‐enhanced source/drain electrode surface energy, which improves wetting, semiconductor/metal interface quality, and semiconductor morphology at the electrode and channel. Overall, contact resistance in n‐type OECTs is investigated, whilst identifying source/drain electrode treatment as a useful device engineering strategy for achieving state of the art n‐type OECTs.