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Gate‐Tunable Graphene–WSe 2 Heterojunctions at the Schottky–Mott Limit
Author(s) -
LaGasse Samuel W.,
Dhakras Prathamesh,
Watanabe Kenji,
Taniguchi Takashi,
Lee Ji Ung
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201901392
Subject(s) - schottky diode , materials science , schottky barrier , heterojunction , optoelectronics , graphene , metal–semiconductor junction , fermi level , semiconductor , condensed matter physics , diode , nanotechnology , physics , quantum mechanics , electron
Metal–semiconductor interfaces, known as Schottky junctions, have long been hindered by defects and impurities. Such imperfections dominate the electrical characteristics of the junction by pinning the metal Fermi energy. Here, a graphene–WSe 2 p‐type Schottky junction, which exhibits a lack of Fermi level pinning, is studied. The Schottky junction displays near‐ideal diode characteristics with large gate tunability and small leakage currents. Using a gate electrostatically coupled to the WSe 2 channel to tune the Schottky barrier height, the Schottky–Mott limit is probed in a single device. As a special manifestation of the tunable Schottky barrier, a diode with a dynamically controlled ideality factor is demonstrated.