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Gate‐Tunable and Multidirection‐Switchable Memristive Phenomena in a Van Der Waals Ferroelectric
Author(s) -
Xue Fei,
He Xin,
Retamal José Ramón Durán,
Han Ali,
Zhang Junwei,
Liu Zhixiong,
Huang JingKai,
Hu Weijin,
Tung Vincent,
He JrHau,
Li LainJong,
Zhang Xixiang
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201901300
Subject(s) - memristor , neuromorphic engineering , materials science , ferroelectricity , non volatile memory , photocurrent , conductance , optoelectronics , polarization (electrochemistry) , nanotechnology , electronic engineering , condensed matter physics , computer science , physics , chemistry , machine learning , artificial neural network , dielectric , engineering
Memristive devices have been extensively demonstrated for applications in nonvolatile memory, computer logic, and biological synapses. Precise control of the conducting paths associated with the resistance switching in memristive devices is critical for optimizing their performances including ON/OFF ratios. Here, gate tunability and multidirectional switching can be implemented in memristors for modulating the conducting paths using hexagonal α‐In 2 Se 3 , a semiconducting van der Waals ferroelectric material. The planar memristor based on in‐plane (IP) polarization of α‐In 2 Se 3 exhibits a pronounced switchable photocurrent, as well as gate tunability of the channel conductance, ferroelectric polarization, and resistance‐switching ratio. The integration of vertical α‐In 2 Se 3 memristors based on out‐of‐plane (OOP) polarization is demonstrated with a device density of 7.1 × 10 9 in. −2 and a resistance‐switching ratio of well over 10 3 . A multidirectionally operated α‐In 2 Se 3 memristor is also proposed, enabling the control of the OOP (or IP) resistance state directly by an IP (or OOP) programming pulse, which has not been achieved in other reported memristors. The remarkable behavior and diverse functionalities of these ferroelectric α‐In 2 Se 3 memristors suggest opportunities for future logic circuits and complex neuromorphic computing.