Premium
Anti‐Ambipolar Transport with Large Electrical Modulation in 2D Heterostructured Devices
Author(s) -
Cheng Ruiqing,
Yin Lei,
Wang Feng,
Wang Zhenxing,
Wang Junjun,
Wen Yao,
Huang Wenhao,
Sendeku Marshet Getaye,
Feng Liping,
Liu Yufang,
He Jun
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201901144
Subject(s) - ambipolar diffusion , materials science , transconductance , modulation (music) , optoelectronics , graphene , transistor , nanotechnology , heterojunction , field effect transistor , semiconductor , voltage , electrical engineering , physics , electron , quantum mechanics , acoustics , engineering
Van der Waals materials and their heterostructures provide a versatile platform to explore new device architectures and functionalities beyond conventional semiconductors. Of particular interest is anti‐ambipolar behavior, which holds potentials for various digital electronic applications. However, most of the previously conducted studies are focused on hetero‐ or homo‐ p–n junctions, which suffer from a weak electrical modulation. Here, the anti‐ambipolar transport behavior and negative transconductance of MoTe 2 transistors are reported using a graphene/h‐BN floating‐gate structure to dynamically modulate the conduction polarity. Due to the asymmetric electrical field regulating effect on the recombination and diffusion currents, the anti‐ambipolar transport and negative transconductance feature can be systematically controlled. Consequently, the device shows an unprecedented peak resistance modulation factor (≈5 × 10 3 ), and effective photoexcitation modulation with distinct threshold voltage shift and large photo on/off ratio (≈10 4 ). Utilizing this large modulation effect, the voltage‐transfer characteristics of an inverter circuit variant are further studied and its applications in Schmitt triggers and multivalue output are further explored. These properties, in addition to their proven nonvolatile storage, suggest that such 2D heterostructured devices display promising perspectives toward future logic applications.