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Controllable Growth of Aligned Monocrystalline CsPbBr 3 Microwire Arrays for Piezoelectric‐Induced Dynamic Modulation of Single‐Mode Lasing
Author(s) -
Yang Zheng,
Lu Junfeng,
ZhuGe Minghua,
Cheng Yang,
Hu Jufang,
Li Fangtao,
Qiao Shuang,
Zhang Yufei,
Hu Guofeng,
Yang Qing,
Peng Dengfeng,
Liu Kaihui,
Pan Caofeng
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201900647
Subject(s) - lasing threshold , materials science , optoelectronics , laser , piezoelectricity , modulation (music) , optics , resonator , monocrystalline silicon , silicon , wavelength , physics , composite material , philosophy , aesthetics
CsPbBr 3 shows great potential in laser applications due to its superior optoelectronic characteristics. The growth of CsPbBr 3 wire arrays with well‐controlled sizes and locations is beneficial for cost‐effective and largely scalable integration into on‐chip devices. Besides, dynamic modulation of perovskite lasers is vital for practical applications. Here, monocrystalline CsPbBr 3 microwire (MW) arrays with tunable widths, lengths, and locations are successfully synthesized. These MWs could serve as high‐quality whispering‐gallery‐mode lasers with high quality factors (>1500), low thresholds (<3 µJ cm −2 ), and long stability (>2 h). An increase of the width results in an increase of the laser quality and the resonant mode number. The dynamic modulation of lasing modes is achieved by a piezoelectric polarization‐induced refractive index change. Single‐mode lasing can be obtained by applying strain to CsPbBr 3 MWs with widths between 2.3 and 3.5 µm, and the mode positions can be modulated dynamically up to ≈9 nm by changing the applied strain. Piezoelectric‐induced dynamic modulation of single‐mode lasing is convenient and repeatable. This method opens new horizons in understanding and utilizing the piezoelectric properties of lead halide perovskites in lasing applications and shows potential in other applications, such as on‐chip strain sensing.