Photonic Memory: Infrared‐Sensitive Memory Based on Direct‐Grown MoS 2 –Upconversion‐Nanoparticle Heterostructure (Adv. Mater. 49/2018) | Zendy

Zhai Yongbiao | Zendy; Yang Xueqing | Zendy; Wang Feng | Zendy; Li Zongxiao | Zendy; Ding Guanglong | Zendy; Qiu Zhifan | Zendy; Wang Yan | Zendy; Zhou Ye | Zendy; Han SuTing | Zendy

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Photonic Memory: Infrared‐Sensitive Memory Based on Direct‐Grown MoS 2 –Upconversion‐Nanoparticle Heterostructure (Adv. Mater. 49/2018)

Author(s) -

Zhai Yongbiao,

Yang Xueqing,

Wang Feng,

Li Zongxiao,

Ding Guanglong,

Qiu Zhifan,

Wang Yan,

Zhou Ye,

Han SuTing

Publication year - 2018

Publication title -

advanced materials

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 10.707

H-Index - 527

eISSN - 1521-4095

pISSN - 0935-9648

DOI - 10.1002/adma.201870377

Subject(s) - materials science , heterojunction , optoelectronics , photon upconversion , photonics , nanoparticle , photodetector , nanotechnology , luminescence

In article number 1803563 , Feng Wang, Ye Zhou, Su‐Ting Han, and co‐workers develop an NIR photonic memristor based on a MoS 2 –upconversion nanoparticle heterostructure. The heterostructure, acting as exciton generation/separation centers, remarkably improves NIR‐light‐controlled memory performance. Meanwhile, the as‐fabricated photonic memory array also displays high integration with photodetectors, and can be used to make a core component of a bioinspired vision system.

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