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Photonic Memory: Infrared‐Sensitive Memory Based on Direct‐Grown MoS 2 –Upconversion‐Nanoparticle Heterostructure (Adv. Mater. 49/2018)
Author(s) -
Zhai Yongbiao,
Yang Xueqing,
Wang Feng,
Li Zongxiao,
Ding Guanglong,
Qiu Zhifan,
Wang Yan,
Zhou Ye,
Han SuTing
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201870377
Subject(s) - materials science , heterojunction , optoelectronics , photon upconversion , photonics , nanoparticle , photodetector , nanotechnology , luminescence
In article number 1803563 , Feng Wang, Ye Zhou, Su‐Ting Han, and co‐workers develop an NIR photonic memristor based on a MoS 2 –upconversion nanoparticle heterostructure. The heterostructure, acting as exciton generation/separation centers, remarkably improves NIR‐light‐controlled memory performance. Meanwhile, the as‐fabricated photonic memory array also displays high integration with photodetectors, and can be used to make a core component of a bioinspired vision system.