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2D Phosphorene: 2D Phosphorene: Epitaxial Growth and Interface Engineering for Electronic Devices (Adv. Mater. 47/2018)
Author(s) -
Zhang Jia Lin,
Han Cheng,
Hu Zehua,
Wang Li,
Liu Lei,
Wee Andrew T. S.,
Chen Wei
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201870359
Subject(s) - phosphorene , materials science , epitaxy , black phosphorus , doping , nanotechnology , optoelectronics , substrate (aquarium) , interface (matter) , composite material , band gap , layer (electronics) , capillary number , capillary action , oceanography , geology
In article number 1802207 , Wei Chen and co‐workers highlight their recent progress in the interface engineering of 2D phosphorene for applications in both epitaxial growth and electronic devices. Their detailed investigations reveal the critical role of substrates for epitaxial growth of 2D phosphorene, demonstrate a highly efficient surface transfer doping method, and provide a comprehensive understanding of the oxidation mechanism of black phosphorus in air.