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2D Materials: Chemical Growth of 1 T ‐TaS 2 Monolayer and Thin Films: Robust Charge Density Wave Transitions and High Bolometric Responsivity (Adv. Mater. 38/2018)
Author(s) -
Wang Xinsheng,
Liu Haining,
Wu Juanxia,
Lin Junhao,
He Wen,
Wang Hui,
Shi Xinghua,
Suenaga Kazutomo,
Xie Liming
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201870289
Subject(s) - materials science , monolayer , chemical vapor deposition , bolometer , responsivity , charge density wave , thin film , hexagonal boron nitride , charge (physics) , hexagonal crystal system , nanotechnology , optoelectronics , condensed matter physics , graphene , optics , crystallography , superconductivity , photodetector , physics , quantum mechanics , detector , chemistry
Chemical synthesis of two‐dimensional charge‐density‐wave (CDW) materials on insulating substrates is important. In article number 1800074 , Liming Xie and co‐workers develop a chemical vapor deposition (CVD) strategy to synthesize 1 T ‐TaS 2 monolayers and few‐layers on hexagonal boron nitride (h‐BN). Robust CDW transitions are observed down to the monolayer extreme and highly responsive room‐temperature bolometers are fabricated and demonstrated.