Premium
2D Materials: Synaptic Barristor Based on Phase‐Engineered 2D Heterostructures (Adv. Mater. 35/2018)
Author(s) -
Huh Woong,
Jang Seonghoon,
Lee Jae Yoon,
Lee Donghun,
Lee Donghun,
Lee Jung Min,
Park HongGyu,
Kim Jong Chan,
Jeong Hu Young,
Wang Gunuk,
Lee ChulHo
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201870266
Subject(s) - synapse , materials science , controllability , synaptic plasticity , heterojunction , neuromorphic engineering , memristor , neuroscience , memory consolidation , nanotechnology , artificial neural network , computer science , optoelectronics , artificial intelligence , electrical engineering , biology , engineering , hippocampus , biochemistry , receptor , mathematics
In article number 1801447 , Gunuk Wang, Chul‐Ho Lee, and co‐workers report an artificial synaptic architecture by monolithically integrating a memristor and a barristor using phase‐engineered 2D heterostructures. This three‐terminal artificial synapse, termed as a “synaptic barristor”, can implement fundamental synaptic functions with external gate controllability. Such unique capabilities enable the accelerated consolidation and conversion of synaptic plasticity, functionally analogous to the synapse with an additional neuromodulator in biological neural networks.