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Perovskite p–n Junctions: Strong Depletion in Hybrid Perovskite p–n Junctions Induced by Local Electronic Doping (Adv. Mater. 15/2018)
Author(s) -
Ou Qingdong,
Zhang Yupeng,
Wang Ziyu,
Yuwono Jodie A.,
Wang Rongbin,
Dai Zhigao,
Li Wei,
Zheng Changxi,
Xu ZaiQuan,
Qi Xiang,
Duhm Steffen,
Medhekar Nikhil V.,
Zhang Han,
Bao Qiaoliang
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201870102
Subject(s) - doping , perovskite (structure) , materials science , power consumption , depletion region , p–n junction , photodiode , optoelectronics , nanotechnology , power (physics) , semiconductor , crystallography , physics , chemistry , quantum mechanics
In article number 1705792 , Yupeng Zhang, Han Zhang, Qiaoliang Bao, and co‐workers report spatially controlled doping of individual organic–inorganic hybrid perovskite nanosheets through surface transfer doping. The resulting lateral p–n junctions exhibit unprecedentedly strong carrier‐depletion characteristics with an ultrabroad depletion region up to 10 μm, which leads to highly efficient photodiodes with zero power consumption.