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Interfacial Defects: Probing and Manipulating the Interfacial Defects of InGaAs Dual‐Layer Metal Oxides at the Atomic Scale (Adv. Mater. 2/2018)
Author(s) -
Wu Xing,
Luo Chen,
Hao Peng,
Sun Tao,
Wang Runsheng,
Wang Chaolun,
Hu Zhigao,
Li Yawei,
Zhang Jian,
Bersuker Gennadi,
Sun Litao,
Pey Kinleong
Publication year - 2018
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201870013
Subject(s) - materials science , transmission electron microscopy , atomic units , layer (electronics) , nanoscopic scale , metal , nanotechnology , electron microscope , optoelectronics , optics , metallurgy , physics , quantum mechanics
The defect‐driven interfacial electron structure of the Ti/ZrO 2 /Al 2 O 3 /InGaAs system is probed and manipulated by Xing Wu, Litao Sun, Kinleong Pey, and co‐workers in article number 1703025 using a specifically designed in situ transmission electron microscopy experimental method. Interfacial defects induced by missing oxygen atoms are found to be the main reason for the device failure. This paves the way to future high‐speed and high‐reliability devices.