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High‐Performance Field‐Effect Transistors Based on αP and βP
Author(s) -
Montes Enrique,
Schwingenschlögl Udo
Publication year - 2019
Publication title -
advanced materials
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 10.707
H-Index - 527
eISSN - 1521-4095
pISSN - 0935-9648
DOI - 10.1002/adma.201807810
Subject(s) - zigzag , materials science , field effect transistor , monolayer , transistor , black phosphorus , optoelectronics , electrode , subthreshold conduction , non equilibrium thermodynamics , condensed matter physics , nanotechnology , voltage , electrical engineering , thermodynamics , physics , quantum mechanics , geometry , mathematics , engineering
The electronic properties of black and blue phosphorus nanoribbons are investigated, which enables the proposal of junction‐free field‐effect transistors that comprise metallic armchair nanoribbons as electrodes and, in between, a semiconducting zigzag nanoribbon as channel material (cut out of a single sheet of monolayer black or blue phosphorus). Using first‐principles calculations and the nonequilibrium Green's function method, the proposed field‐effect transistors are characterized. It is found that it is possible to achieve outstanding performance, with high on/off ratios, low subthreshold swings, and high transconductances.